It depends on the application, for a common emitter/collector amplifier, sure. As a switch, sure. The byproducts are different since the JFET is a "channel" and a transistor is two stacked opposite diodes. One requires minimum current of much higher magnitude to operate (NPN) with proper biasing while the other only requires miniscewal current but proper voltage to operate. The power factor is also a bit different between the devices as well as the amount of operational noise.....but ultimately is application dependant. I don't think replacing one with the other will give a "real world" picture, but if its a basic amplifier or switch technique, then it will give an "idea" of what should happen.
The bias methods will depend on what needs to be done. And that is what makes it apples to oranges.....IMO