Ideal Diode In Multisim

[Jamie19]

Hi,

For some work I am doing, i need to simulate and prove the IV characteristic of an ideal diode (e.g. the diode acting like a switch with infinite current at 0V) and i intended to do this using a virtual diode in multisim.  Does anyone know what parameters would be the best to give an ideal characteristic when using the IV analyser?  I have tried reducing the junction Potential (VJ) to a very low value (0.0000001V) but it does not seem to make a change.  The diode instead conducts at approx 0.7V and has a curve like a real diode?

[DanC12]

Hi Jamie19,

Apologies for the delay in responding to this post.

I would recommend looking at the links below. The Youtube link explains the diode IV characteristic and its use in Multsim. 

NI Multisim: Diode current-voltage characteristic

https://www.youtube.com/watch?v=fGYyYm7J3JA

Kind regards,

DanC12

[OStep]

You can try setting the "n" (emission coefficient) parameter to a small value, such as 0.1 or even 0.01. 

Alternatively, you can try using the "DIODE" component in the Power/SWITCHES group. You can directly set the "Forward voltage drop" parameter to 0. Both the forward and reverse regions are modeled by ideal resistors.

[terribleloser.24]

The best way is this one, try making emission coefficient 0.01 and more you increase decimal values more it will become ideal diode.