[url=http://www.utsource.net/][img]http://photos.utsource.net/gif/utsource1.gif[/img][/url] product details:[url=http://www.utsource.net/2N3251.html]http://www.utsource.net/2N3251.html[/url] [b]If you want to buy this product please visit:[/b][url=http://www.utsource.net/ic-datasheet/2N3251-326952.html][b]http://www.utsource.net/ic-datasheet/2N32... Popular search: [url=http://www.utsource.net/ic-datasheet/2N3251-326952.html]2N3251[/url] datasheet 2N3251 equivalent 2N3251 for sale 2N3251 transistor Boca Semiconductor Corp. MAXIMUM RATINGS Symbol 2N3250 ZN3251 2N3251A Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Totaf Device Dissipation @ 丁八=25°C Derate above 25。C 0.36 2.06 Watt mW/°C Total Device Dissipation @ Tc = 25X Derate above 25。C 1.2 6.9 Operating and Storage Temperature Temperature Range 丁」'丁stg -65 to + 200 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic ] Symbol ] Min [ Max f Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltageり） (IC = -10 mAdc) 2N3250, 2N3251 2N3251A V(BR)CEO Collector-Base Breakdown Voltage OC = -10 /i.Adc) 2N3250, 2N3251 2N3251A v(BR)CBO -50 -60 Emitter-Base Breakdown Voltage ■E = -10 MAdc) V(BR)EBO Collector Cutoff Current (Vce = -40 Vdc, Veb = -3.0 Vdc) Base Cutoff Current (Vce ^ -40 Vdc, Veb = -3.0 vdc) ON CHARACTERISTICS DC Forward Current Transfer Ratio (IC = -0.1 mAdc, VCe = - 10 Vdc) 2N3250 2N3251, 2N3251A dC = -1.0 mAdc, VCE = - 1.0 Vdc) 2N3250 2N3251, 2N3251A {IC = -10 mAdc, Vce = -1.0 VdcKD 2N3250 2N3251, 2N3251A 50 100 150 300 {IC ニ -50 mAdc, Vce = "1.0 Vdc}{1) 2N3250 2N3251, 2N3251A Collector-Emitter Saturation Voltage (1) dC = -10 mAdc, Ib = - 1.0 mAdc) (IC = -50 mAdc, = - 5.0 mAdc Vce (sat) -0.25 -0.5 Base-Emitter Saturation Voltage (1) {IC = -10 mAdc, Ib = -1.0 mAdc) dC = -50 mAdc, Ib = -5.0 mAdc) vBE(sat) -0.9 -1.2 SMALL-SIGNAL CHARACTERISTICS Current-Gain — Bandwidth Product dC = -10 mAdc, Vce = -20 Vdc, f = 100 MHz) 2N3250 2N3251, 2N3251A 250 300 Output Capacitance (Vcb = -10 Vdc, lE = 0, f = 1.0 MHz) Input Capaciatance (Veb = -10 vdc, ic = o, f = 1.0 mhz) ELECTRICAL CHARACTERISTICS (continued) <T> = 25。C unless otherwise noted.) Characteristic Symbol Input Impedance 2N3250 (lc = -1.0 mA, Vce = - 10 V, f = 1.0 kHz) 2N3251, 2N3251A 1.0 2.0 Voltage Feedback Ratio 2N3250 (lc = -1.0 mA, Vce 10 V, f = 1.0 kHz) 2N3251, 2N3251A X 10"4 Small-Signal Current Gain 2N3250 (lc = -1.0 mA, Vce = —10 V, f = 1.0 kHz》 2N3251, 2N3251A 50 100 200 400 Output Admittance 2N3250 (lc = -1.0 mA, Vce = -10 V, f = 1.0 kHz) 2N3251, 2N3251A 4.0 10 /xmhos Collector Base Time Constant (lC = -10 mA, Vce 20 V,f = 31.8 MHz) Noise Figure (lc = 一 100 uA, Vcf 5.0 V, Rs = 1.0 kn, f = 100 Hz} SWITCHING CHARACTERISTICS Characteristic Symbol Delay Time (Vcc = -3.0 Vdc, Vbe = +0.5 Vdc lc = -10 mAdc, Ibi = 一”!.0 mA) Rise Time Storage Time lC lOmAdc, !B1 = >B1 = -1-0 mAdc) 2N3250 {Vcc = -3.0 V) 2N3251, 2N3251A 175 200 Fall Time (1) Pulse Test: PW = 300 fxs, Duty Cycle = 2.0%. lr, COLLECTOR CURRENT (mAI ofo 5 2 1 oal3SI1 SWITCHING TIME CHARACTERISTICS FIGURE 1 一 DELAY AND RISE TIME FIGURE 2 — STORAGE AND FALL TIME i i i i Tj = 25°C -5 -10 -20 -50 lr, COLLECTOR CURRENT (mA) o o o o o & Q 5 2 1 2 1 3LLJwli. AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS 2N3250 2N3251,A (VCE = 6.0 V, TA = 25DC) FIGURE 3 — FREQUENCY VCE = 0/xA fiOURC Nf:F - 1 A if lc = - 100 MA 200 400 1KC 2KC 4KC 10KC 20 KC 40 KC 10DKC i. FREQUENCY (CYCLES) FIGURE 4 — SOURCE RESISTANCE lC = -1.0 mA i (qpinolJLLJsi』JN (qpHCEnslJLJJsi 主 lc = -10 jxA lC = -lOOjuA 100 200 400 IK 2K 4K 10K 20 K 40K 100 K SOURCE RESISTANCE <OHMS) I PARAMETERS vCE = iov,f = 1.0 kc, Ta = 25。C FIGURE 5 — CURRENT GAIN FIGURE 6 — OUTPUT ADMITTANCE 200 100 50 woqETyl su -05 -1.0 -2.0 -5.0 -10 lC, COLLECTOR CURRENT {mA) -0.1 -02 FIGURE 8 一 INPUT IMPEDANCE {SSH§ タ -05 -1.0 -20 lr, COLLECTOR CURRENT I mAdc) lC, COLLECTOR CURRENT (mA) FIGURE 7 — VOLTAGE FEEDBACK RATIO lr, COLLECTOR CURRENT 丨mAI <silo>UJ9V110AQC31LIS3.arolo3no3 .p VIALIZED A 一 10 mA, V 74 ウ WW TYPICAL hfE = 167 - 2N3251,2N3251A, JAN 2N3251A II II 1 1 丨 1 1 1 FIGURE 9 — NORMALIZED CURRENT GAIN CHARACTERISTICS 一 0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAl NIVO1N3QCH3amznvwgN1£|兰 FIGURE 10 — COLLECTOR SATURATION REGION This graph shows the effect of base current on collector current fto is the current gam of (hp transistor at 1 volt, and 街(forced gain) is the ratio of Ic/1bf in a circuit EXAMPLE- For type 2N3251, estimate a base current (lBf) to insure saturation at a temperature of 25°C and a collector current of 10 mA -6.68 mA 10mA/lBF Observe that at Ic ^ 10 mA an overdrive factor of at least 2 5 is required to drive the transistor well into the saturation region From Figure 1, it is seen that hFE @ 1 volt is typically 167 (guaranteed limits from the Table of Characteristics can be used for "worst case" design) /30 hFE@lVolt W IC/Ibf 匙,OVERDRIVE FACTOR 0F FIGURE 11 — SATURATION VOLTAGES VBE (S = (sat) 一 5 —10 — 20 — 50 FIGURE 12 — TEMPERATURE COEFFICIENTS 25°Cto125°C. 0VCforVcE(satl ci oo._ {sno>ui9vbo> NollvynKS -10 一 20 -30 -40 \r. COLLECTOR CURRENT ImAI lr nflllFrrORniRRFlMT fmAl 170ft , FIGURE 13 —fy AND rb'Cc versus lc -10 一 t5 — 20 -25 lr, COLLECTOR CURRENT (mAdc) 3201 OE一 I3n8yd HlalMisI Z<C3^LLIyyB ssd} 1NV1SN8 ト mco<g.sl—o岂 8 FIGURE 14 — 30 MC EQUIVALENT CIRCUIT VCE= - 10 V; IE = +5.0 mA MAG. = 29 db (TYPICALLY) FIGURE 16 — CHARGE DATA 一 5 -10 一 20 Iへ COLLECTOR CURRENT ImAI s syv5 FIGURE 15 — JUNCTION CAPACITANCE 一 0.2 — 05 -10 一 2.0 — 5.0 — REVERSE BIAS (VOLTS)
